R2J20657CNP - MOSFET

Renesas

Datasheet Details

The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package.

Based on Intel 6  6 DrMOS Specification.
Built-in power MOS FET suitable for Desktop, Server application.
Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
Built-in driver circuit which matches the power MOS FET.
Built-in tri-state input function which can support a number of PWM controllers.
High-frequency operation (above 1 MHz) possible.
VIN operating-voltage range: 20 Vmax.
Large average output current (Max.40 A).
Achieve.

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