Part number:
R2J25953
Manufacturer:
Renesas ↗ Technology
File Size:
169.75 KB
Description:
H-bridge control high speed power switching.
* For Automotive application
* Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)
* Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
* Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage De
R2J25953 Datasheet (169.75 KB)
R2J25953
Renesas ↗ Technology
169.75 KB
H-bridge control high speed power switching.
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