R2J20655BNP - MOSFET

Renesas

Datasheet Details

The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package.

Based on Intel 6  6 DrMOS Specification.
Built-in power MOS FET suitable for Desktop, Server application.
Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
Built-in driver circuit which matches the power MOS FET.
Built-in tri-state input function which can support a number of PWM controllers.
High-frequency operation (above 1 MHz) possible.
VIN operating-voltage range: 27 Vmax.
Large average.

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Renesas R2J20655BNP-like datasheet

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