R2J20655BNP Datasheet - Renesas

R2J20655BNP MOSFET

The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates .

R2J20655BNP Features

* Based on Intel 6  6 DrMOS Specification.

* Built-in power MOS FET suitable for Desktop, Server application.

* Low-side MOS FET with built-in SBD for lower loss and reduced ringing.

* Built-in driver circuit which matches the power MOS FET

* Built-in tri-state input function wh

R2J20655BNP-Renesas.pdf