RJK0330DPB

Silicon N Channel Power MOS FET Power Switching

Renesas Technology

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V)

* Pb-free

* Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2

RJK0330DPB

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Silicon n channel power mos fet power switching.

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