RJK0397DPA Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK0397DPA, Silicon N Channel Power MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Renesa

RJK0397DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* REJ03G1788-0230 Rev.2.30 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package n