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RJK0397DPA Silicon N Channel Power MOS FET

RJK0397DPA Description

Preliminary www.DataSheet4U.com Datasheet RJK0397DPA Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK0397DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* REJ03G1788-0230 Rev.2.30 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package n

RJK0397DPA Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel Power MOS FET Renesas Technology
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