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RJK03H1DPA

Built in SBD N Channel Power MOS FET

RJK03H1DPA Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance

* Pb-free

* Halogen-free Outline Preliminary Datasheet R07DS0216EJ0300 Rev.3.00 Mar 22, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))

RJK03H1DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03H1DPA Datasheet (265.88 KB)

Preview of RJK03H1DPA PDF

Datasheet Details

Part number:

RJK03H1DPA

Manufacturer:

Renesas ↗ Technology

File Size:

265.88 KB

Description:

Built in sbd n channel power mos fet.

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RJK03H1DPA Built SBD Channel Power MOS FET Renesas Technology

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