RJK03H1DPA Datasheet (Renesas Technology) - Built in SBD N Channel Power MOS FET

RJK03H1DPA, Built in SBD N Channel Power MOS FET

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Renesa

RJK03H1DPA Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance

* Pb-free

* Halogen-free Outline Preliminary Datasheet R07DS0216EJ0300 Rev.3.00 Mar 22, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))