RJK03H1DPA Built in SBD N Channel Power MOS FET

Renesas Technology

Description

RJK03H1DPA 30V, 45A, 2.4mΩmax.Built in SBD N Channel Power MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK03H1DPA
Manufacturer: Renesas ↗ Technology
File Size: 265.88 KB
Datasheet: RJK03H1DPA-RenesasTechnology.pdf
Description: Built in SBD N Channel Power MOS FET

Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance
* Pb-free
* Halogen-free Outline Preliminary Datasheet R07DS0216EJ0300 Rev.3.00 Mar 22, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK03H1DPA Built SBD Channel Power MOS FET Renesas Technology

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