RJK03M0DPA Datasheet, Fet, Renesas Technology

✔ RJK03M0DPA Features

High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free Outline RENESAS Package code

✔ RJK03M0DPA Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

PDF File Details

Renesas Technology manufacturer logo

Part number:

RJK03M0DPA

Manufacturer:

Renesas ↗ Technology

File Size:

269.59kb

Download:

📄 Datasheet

Description:

N channel power mos fet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

📥 Download PDF (269.59kb)

📁 Related Datasheet

RJK03M1DPA - N Channel Power MOS FET (Renesas Technology)
RJK03M1DPA 30V, 50A, 2.3mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low .

RJK03M2DPA - N Channel Power MOS FET (Renesas Technology)
RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low .

RJK03M3DPA - N Channel Power MOS FET (Renesas Technology)
RJK03M3DPA 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low .

RJK03M4DPA - N Channel Power MOS FET (Renesas Technology)
RJK03M4DPA 30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low .

RJK03M5DNS - Silicon N-Channel MOSFET (Renesas Technology)
RJK03M5DNS Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High de.

RJK03M5DPA - N Channel Power MOS FET (Renesas Technology)
RJK03M5DPA 30V, 30A, 6.5mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low .

RJK03M6DNS - Silicon N-Channel MOSFET (Renesas Technology)
RJK03M6DNS Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High de.

RJK03M6DPA - N-Channel MOSFET (Renesas Technology)
RJK03M6DPA 30V, 30A, 9.4mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low .

RJK03M7DPA - Silicon N-Channel MOSFET (Renesas Technology)
RJK03M7DPA Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High de.

RJK03M8DNS - Silicon N Channel Power MOS FET (Renesas Technology)
RJK03M8DNS Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0774EJ0110 Rev.1.10 May 29, 2012 Features  High speed switchi.

Stock and price

Rochester Electronics LLC

N-CHANNEL POWER MOSFET

DigiKey

RJK03M0DPA-WS-J5A

0 In Stock

Qty : 233 units

Unit Price : $1.29

🛒 Buy Now

TAGS

RJK03M0DPA Channel Power MOS FET Renesas Technology