RJK03M4DPA

N Channel Power MOS FET

Renesas Technology

RJK03M4DPA Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance

* Pb-free

* Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0768EJ0200 Rev.2.0

RJK03M4DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03M4DPA Datasheet (153.16 KB)