RJK03N8DNS Silicon N Channel Power MOS FET

Renesas Technology

Description

Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.00 Feb 29, 201.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK03N8DNS
Manufacturer: Renesas ↗ Technology
File Size: 241.71 KB
Datasheet: RJK03N8DNS-RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 8.0 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJK03N8DNS Silicon Channel Power MOS FET Renesas Technology

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