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RJK03N8DNS

Silicon N Channel Power MOS FET

RJK03N8DNS Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 8.0 V)

* Pb-free

* Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4

RJK03N8DNS General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03N8DNS Datasheet (241.71 KB)

Preview of RJK03N8DNS PDF

Datasheet Details

Part number:

RJK03N8DNS

Manufacturer:

Renesas ↗ Technology

File Size:

241.71 KB

Description:

Silicon n channel power mos fet.
Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.00 Feb 29, 201.

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TAGS

RJK03N8DNS Silicon Channel Power MOS FET Renesas Technology

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