RJK03R4DPA Built in SBD Dual N-channel Power MOS FET

Renesas Technology

Description

Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.0 mΩ max.MOS2 30 V, 50 A, 2.3 mΩ max.Built in SBD Dual N-channel Power MOS FET High Speed Power.

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Datasheet Specifications

Part number: RJK03R4DPA
Manufacturer: Renesas ↗ Technology
File Size: 381.22 KB
Datasheet: RJK03R4DPA-RenesasTechnology.pdf
Description: Built in SBD Dual N-channel Power MOS FET

Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and

RJK03R4DPA Distributors

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RJK03R4DPA Built SBD Dual N-channel Power MOS FET Renesas Technology

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