RJK0455DPB Datasheet - Renesas Technology

RJK0455DPB Silicon N Channel Power MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

www.DataSheet4U.com To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Cor.

RJK0455DPB Features

* High speed switching Low drive current Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* High density mounting REJ03G1878-0200 Rev.2.00 Mar 04, 2010 Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4

RJK0455DPB Datasheet (169.44 KB)