RJK0406JPE Datasheet, Fet, Renesas

✔ RJK0406JPE Features

For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 1.65 m typ.
High current devices : ID = 160 A
Low input capacitance : Ciss = 6300 p

✔ RJK0406JPE Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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RJK0406JPE

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📄 Datasheet

Description:

Silicon n-channel mos fet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJK0406JPE Silicon N-Channel MOS FET Renesas