RJK0851DPB Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK0851DPB, Silicon N Channel Power MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Renesa

RJK0851DPB 80V, 20A, 23m max.

Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Functions High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 18 m typ.

(at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application

RJK0851DPB Features

* characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of