RJK0852DPB Silicon N Channel Power MOS FET

Renesas Technology

Description

RJK0852DPB 80V, 30A, 12m max.Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0080EJ0200 Rev.2.00 Apr 09, 2013 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK0852DPB
Manufacturer: Renesas ↗ Technology
File Size: 100.44 KB
Datasheet: RJK0852DPB-RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Sou

Applications

* Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storag

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RJK0852DPB Silicon Channel Power MOS FET Renesas Technology

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