RJK0853DPB Datasheet (Renesas Technology) - Silicon N Channel Power MOS FET

RJK0853DPB, Silicon N Channel Power MOS FET

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Renesa

RJK0853DPB Features

* High speed switching

* Capable of 4.5 V gate drive

* Low drive current

* High density mounting

* Low on-resistance RDS(on) = 6.2 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 S