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RJK0853DPB Silicon N Channel Power MOS FET

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Description

RJK0853DPB 80V, 40A, 8.0m max.Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0081EJ0300 Rev.3.00 Apr 09, 2013 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 6.2 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 S

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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