RJK6024DPD Switching Datasheet - Renesas Technology

RJK6024DPD Features

Switching
Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
Low drive current
High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010

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RJK6024DPD

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Renesas ↗ Technology

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📄 Datasheet

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Silicon n channel mos fet high speed power switching. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJK6024DPD Application

Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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