RJK6024DPD Datasheet (Renesas Technology) - Silicon N Channel MOS FET High Speed Power Switching

RJK6024DPD, Silicon N Channel MOS FET High Speed Power Switching

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Renesa

RJK6024DPD Features

* Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)

* Low drive current

* High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolu