RJK6024DPD Datasheet - Renesas Technology

RJK6024DPD Silicon N Channel MOS FET High Speed Power Switching

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK6024DPD Features

* Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)

* Low drive current

* High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolu

RJK6024DPD_RenesasTechnology.pdf