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RJK6025DPE Datasheet - Renesas Technology

Silicon N Channel MOS FET High Speed Power Switching

RJK6025DPE Features

* Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)

* Low leakage current

* High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain

RJK6025DPE Datasheet (100.93 KB)

Preview of RJK6025DPE PDF

Datasheet Details

Part number:

RJK6025DPE

Manufacturer:

Renesas ↗ Technology

File Size:

100.93 KB

Description:

Silicon n channel mos fet high speed power switching.

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RJK6025DPE Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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