RJK6025DPE Datasheet, Switching, Renesas Technology

✔ RJK6025DPE Features

Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
Low leakage current
High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline

✔ RJK6025DPE Application

such as the development of weapons of mass destruction or for the purpose of any other military use. When ex

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RJK6025DPE

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Renesas ↗ Technology

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📄 Datasheet

Description:

Silicon n channel mos fet high speed power switching.

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RJK6025DPE Silicon Channel MOS FET High Speed Power Switching Renesas Technology