RJK6029DJA Datasheet (Renesas Technology) - Silicon N Channel MOS FET High Speed Power Switching

RJK6029DJA, Silicon N Channel MOS FET High Speed Power Switching

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Renesa

RJK6029DJA Features

* Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)

* Low drive current

* High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 1. Source 2. Drain 3. Gate 32 1 S Absolute Maxi