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RJK6029DJA

Silicon N Channel MOS FET High Speed Power Switching

RJK6029DJA Features

* Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)

* Low drive current

* High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 1. Source 2. Drain 3. Gate 32 1 S Absolute Maxi

RJK6029DJA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK6029DJA Datasheet (106.32 KB)

Preview of RJK6029DJA PDF

Datasheet Details

Part number:

RJK6029DJA

Manufacturer:

Renesas ↗ Technology

File Size:

106.32 KB

Description:

Silicon n channel mos fet high speed power switching.

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RJK6029DJA Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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