RJK6029DJA - Silicon N Channel MOS FET High Speed Power Switching

Product Overview

Renesas Technology

Datasheet Details

Part number	RJK6029DJA
Manufacturer	Renesas Technology
File Size	106.32 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK6029DJA Datasheet
Additional preview pages of the RJK6029DJA datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C).
Low drive current.
High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010 Outline.

📁 Similar Datasheet

RJK6024DPE - N-Channel Power MOSFET (Renesas)
RJK6025DPD - N-Channel Power MOSFET (Renesas)
RJK6025DPH-E0 - MOS FET (Renesas)
RJK6026DPE - Silicon N-Channel MOSFET (Renesas)
RJK6026DPP-E0 - MOS FET (Renesas)
RJK6002DJE - MOS FET (Renesas)
RJK6002DPE - MOS FET (Renesas)
RJK6002DPH-E0 - MOS FET (Renesas)

Other Datasheets by Renesas Technology

RJK6020DPK - Silicon N Channel MOSFET High Speed Power Switching
RJK6022DJE - Silicon N Channel MOSFET High Speed Power Switching
RJK6024DP3-A0 - High Speed Power Switching MOS FET
RJK6024DPD - Silicon N Channel MOS FET High Speed Power Switching
RJK6025DPE - Silicon N Channel MOS FET High Speed Power Switching
RJK6026DPP - Silicon N Channel MOSFET High Speed Power Switching

Published: Jul 23, 2010 |