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RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching

RJL5015DPK Description

Preliminary www.DataSheet4U.com Datasheet RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJL5015DPK Features

* Built-in fast recovery diode
* Low on-resistance RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (

RJL5015DPK Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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