RJL5015DPK Datasheet (Renesas Technology) - Silicon N Channel MOS FET High Speed Power Switching

RJL5015DPK, Silicon N Channel MOS FET High Speed Power Switching

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Renesa

RJL5015DPK Features

* Built-in fast recovery diode

* Low on-resistance RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)

* Low leakage current

* High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (