RJL5012DPE Datasheet - Renesas

RJL5012DPE, N-Channel Power MOSFET

Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Details

Part number:

RJL5012DPE

Manufacturer:

Renesas ↗

File Size:

140.99 KB

Description:

N-Channel Power MOSFET

Features

* Built-in fast recovery diode
* Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
* Low leakage current
* High speed switching R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LD

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJL5012DPE N-Channel Power MOSFET Renesas

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