RJL5012DPP-M0 Datasheet - Renesas

RJL5012DPP-M0 Silicon N Channel MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJL5012DPP-M0 Features

* Built-in fast recovery diode

* Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)

* Low leakage current

* High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Sym

RJL5012DPP-M0-Renesas.pdf