RJL5012DPP-M0 Datasheet, Fet, Renesas

RJL5012DPP-M0 Features

• Fet
• Built-in fast recovery diode
• Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switchin

PDF File Details

Part number:

RJL5012DPP-M0

Manufacturer:

Renesas ↗

File Size:

93.47kb

Download:

📄 Datasheet

Description:

Silicon n channel mos fet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJL5012DPP-M0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

TAGS

RJL5012DPP-M0

Renesas

📁 Related Datasheet

RJL5012DPP - Silicon N Channel MOS FET (Renesas)
RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • H.

RJL5012DPE - N-Channel Power MOSFET (Renesas)
Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS.

RJL5013DPE - N-Channel Power MOSFET (Renesas)
Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS.

RJL5013DPP - Silicon N-Channel MOSFET (Renesas)
RJL5013DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • H.

RJL5013DPP-E0 - MOSFET (Renesas)
RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at .

RJL5014DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1798-0100 Rev.1.00 Jun 30, 2009 Features • • • • Built-in .

RJL5014DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1690-0300 Rev.3.00 Jun 13, 2008 Features • • • • Built-in .

RJL5015DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
Preliminary .. Datasheet RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  L.

RJL5018DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL5018DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance L.

RJL5020DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
.. RJL5020DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1733-0400 Rev.4.00 Aug 29, 2008 Features • • • • Built-in .