RQA0008NXAQS Silicon N-Channel MOS FET

Renesas Technology

Description

www.DataSheet4U.com RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007 .

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Datasheet Specifications

Part number: RQA0008NXAQS
Manufacturer: Renesas ↗ Technology
File Size: 186.94 KB
Datasheet: RQA0008NXAQS_RenesasTechnology.pdf
Description: Silicon N-Channel MOS FET

Features

* High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
* Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1 4 1. Gate 2. Source 3. Drain 4. Source 2, 4

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and p

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