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RQA0008RXDQS Silicon N-Channel MOS FET

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Description

www.DataSheet4U.com RQA0008RXDQS Silicon N-Channel MOS FET REJ03G1326-0100 Rev.1.00 Oct 16, 2006 .

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Features

* High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
* Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK     3 3 2 1 1 1. Gate 2. Source 3. Drain 4. Source 4 2

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