2SC4702 Datasheet, Transistor, Renesas

2SC4702 Features

• Transistor
• High breakdown voltage VCEO = 300 V
• Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “XV
    

PDF File Details

Part number:

2SC4702

Manufacturer:

Renesas ↗

File Size:

144.70kb

Download:

📄 Datasheet

Description:

Npn transistor. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

TAGS

2SC4702

Renesas

📁 Related Datasheet

2SC4702 - NPN TRANSISTOR (Hitachi Semiconductor)
2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outli.

2SC4702 - NPN Transistor (Kexin)
SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Transistors Unit: mm Features High breakdown voltage +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small C.

2SC4703 - NPN Transistor (INCHANGE)
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4703 DESCRIPTION ·Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VC.

2SC4703 - NPN TRANSISTOR (NEC)
DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is des.

2SC4703 - NPN SILICON RF TRANSISTOR (CEL)
NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESC.

2SC4704 - Silicon NPN Transistor (Hitachi Semiconductor)
2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low out.

2SC4705 - NPN TRANSISTOR (Sanyo Semicon Device)
Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications.

2SC4705 - NPN Epitaxial Planar Silicon Transistor (Kexin)
SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.

2SC4706 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability.

2SC4706 - NPN TRANSISTOR (Sanken electric)
2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC.