Part number:
2SC4702
Manufacturer:
File Size:
144.70 KB
Description:
Npn transistor.
* High breakdown voltage VCEO = 300 V
* Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “XV
* ”. Preliminary Datasheet R07DS0275EJ0500 Rev.5.00 Jan 10, 2014 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum R
2SC4702
144.70 KB
Npn transistor.
📁 Related Datasheet
2SC4702 - NPN TRANSISTOR
(Hitachi Semiconductor)
2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ.
Outli.
2SC4702 - NPN Transistor
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SMD Type
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SOT-23
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Unit: mm
Features
High breakdown voltage
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
Small C.
2SC4703 - NPN Transistor
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isc Silicon NPN RF Transistor
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2SC4703
DESCRIPTION ·Low Distortion at Low Supply Voltage.
IM2- 55 dB TYP., IM3- 76 dB TYP. @VC.
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DATA SHEET
SILICON TRANSISTOR
2SC4703
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The 2SC4703 is des.
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(Hitachi Semiconductor)
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Feature
• Excellent high frequency characteristics fT = 300 MHz typ
• High voltage and low out.
2SC4705 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:EN3484
NPN Epitaxial Planar Silicon Transistor
2SC4705
Low-Frequency General-Purpose Amplifier, Applications (High hFE)
Applications.
2SC4705 - NPN Epitaxial Planar Silicon Transistor
(Kexin)
SMD Type
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NPN Epitaxial Planar Silicon Transistor 2SC4705
Features
High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
