2SD1286-Z SILICON POWER TRANSISTOR

Renesas

Description

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: 2SD1286-Z
Manufacturer: Renesas ↗
File Size: 1.83 MB
Datasheet: 2SD1286-Z-Renesas.pdf
Description: SILICON POWER TRANSISTOR

Features

* High hFE = 2000 to 30000
* Complement to 2SB963-Z 1 2 3 0.5 ±0.1 0.5 ±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 Note 2 2.3 ±0.3 60 60 8 1 2 2.0

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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2SD1286-Z SILICON POWER TRANSISTOR Renesas

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