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2SK1629-E1-E - MOSFET

Features

  • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C).
  • High speed switching.
  • Low drive current.
  • Suitable for switching regulator and DC-DC converter.
  • Quality grade: Standard Outline.

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Datasheet preview – 2SK1629-E1-E

Datasheet Details

Part number 2SK1629-E1-E
Manufacturer Renesas
File Size 242.65 KB
Description MOSFET
Datasheet download datasheet 2SK1629-E1-E Datasheet
Additional preview pages of the 2SK1629-E1-E datasheet.

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Full PDF Text Transcription

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2SK1629-E1-E 500V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard Outline RENESAS Package code: PRSS0003ZN-A, PRSS0003ZC-A (Package name:TO-264A, TO-264) D Datasheet R07DS1197EJ0300 Rev.3.00 Feb.4.2022 1 23 G S 1. Gate 2. Drain 3.
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