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CT60AM-18F Insulated Gate Bipolar Transistor

CT60AM-18F Description

CT60AM-18F Insulated Gate Bipolar Transistor .

CT60AM-18F Features

* VCES : 900 V
* IC : 60 A
* Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL) 4 1 12 3 REJ03G1374-0200 (Previous: MEJ02G0023-0101) Rev.2.00 Jul 07, 2006 2, 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector 3 Applica

CT60AM-18F Applications

* Microwave oven, Electromagnetic cooking devices, Rice-cookers Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Symbol VCE

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Insulated Gate Bipolar Transistor Renesas
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