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K3511 MOS FIELD EFFECT TRANSISTOR

K3511 Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET .
The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.

K3511 Features

* Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 5900 pF TYP.
* Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to

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Datasheet Details

Part number
K3511
Manufacturer
Renesas ↗
File Size
142.49 KB
Datasheet
K3511-Renesas.pdf
Description
MOS FIELD EFFECT TRANSISTOR

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Renesas K3511-like datasheet