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NP80N055MDG - N-CHANNEL POWER MOS FET

Renesas

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Datasheet Details

Part number	NP80N055MDG
Manufacturer	Renesas
File Size	287.04 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP80N055MDG-Renesas.pdf

NP80N055MDG Product details

Description

The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

Logic level.
Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
High current rating ID(DC) = ±80 A.
Low input capacitance Ciss = 4600 pF TYP.
Designed for automotive.

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Published: Aug 27, 2015 |