NP80N055NDG

N-CHANNEL POWER MOS FET

Renesas

NP80N055NDG Features

* Logic level

* Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

NP80N055NDG General Description

The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) P.

NP80N055NDG Datasheet (287.04 KB)