Datasheet Details
Part number:
NP82N06PDG
Manufacturer:
File Size:
181.64 KB
Description:
N-channel power mos fet.
Datasheet Details
Part number:
NP82N06PDG
Manufacturer:
File Size:
181.64 KB
Description:
N-channel power mos fet.
NP82N06PDG, N-CHANNEL POWER MOS FET
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note LEAD PLATING Pure Sn (Tin) Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ.
1.
NP82N06PDG Features
* Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
* Low Ciss Ciss = 5700 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 Gate to Source Voltage (VDS = 0 V) VGSS
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