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NP82N06PDG - N-CHANNEL POWER MOS FET

Renesas

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Datasheet Details

Part number	NP82N06PDG
Manufacturer	Renesas
File Size	181.64 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP82N06PDG-Renesas.pdf

NP82N06PDG Product details

Description

The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A).
Low Ciss Ciss = 5700 pF TYP.

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Published: Oct 12, 2015 |