NP90N06VLG

N-Channel MOSFET

Renesas

NP90N06VLG Features

* Logic level

* Built-in gate protection diode

* Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

* High current rating ID(DC) = ±90 A

* Low input capacitance Ciss = 4600 pF TYP.

NP90N06VLG General Description

The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N06VLG-E1-AY Note NP90N06VLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external e.

NP90N06VLG Datasheet (271.59 KB)