NX6410GH Datasheet - Renesas

NX6410GH, LASER DIODE

Preliminary Data Sheet NX6410GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION R08DS0040EJ0500 Rev.5.00 Jun 07, .
The NX6410GH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Features

* Optical output power
* Low threshold current
* Differential efficiency
* Wide operating temperature range
* InGaAs monitor PIN-PD
* CAN package
* Focal point Po = 14.0 mW lth = 10 mA ηd = 0.3 W/A TC =
* 40 to +85°C φ 5.6 mm 7.5 mm Th

NX6410GH-Renesas.pdf