* Optical output power
* Low threshold current
* Differential efficiency
* Wide operating temperature range
* InGaAs monitor PIN-PD
* CAN package
* Focal point Po = 14.0 mW lth = 10 mA ηd = 0.3 W/A TC =
* 40 to +85°C φ 5.6 mm 7.5 mm Th
NX6410GH Datasheet (163.94 KB)
NX6410GH
163.94 KB
Laser diode.
Preliminary Data Sheet
NX6410GH
LASER DIODE
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
R08DS0040EJ0500 Rev.5.00
Jun 07, .
📁 Related Datasheet
NX6410GH - LASER DIODE
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LASER DIODE
NX6410GH
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
DESCRIPTION
The NX6410GH is a 1 490 nm Multiple Quantum .
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LASER DIODE
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R08DS0042EJ0100.
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FEATURES
• OPTICAL OUTPUT POWER: PO = 5..
