* Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC =
* 5 to +85°C φ 5.6 mm 10.2 mm R08D
NX6240GP Datasheet (937.49 KB)
NX6240GP
California Eastern Labs
937.49 KB
Laser diode.
A Business Partner of Renesas Electronics Corporation. Preliminary NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU .
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