NX6342EP LASER DIODE

California Eastern Labs

Description

A Business Partner of Renesas Electronics Corporation.Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW.
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

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Datasheet Specifications

Part number: NX6342EP
Manufacturer: California Eastern Labs
File Size: 899.28 KB
Datasheet: NX6342EP-CaliforniaEasternLabs.pdf
Description: LASER DIODE

Features

* Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.23 W/A TC =
* 5 to +85°C φ 5.6 mm 6.0 mm R08D

NX6342EP Distributors

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NX6342EP LASER DIODE California Eastern Labs

California Eastern Labs NX6342EP-like datasheet