NX6353EP LASER DIODE

California Eastern Labs

Description

A Business Partner of Renesas Electronics Corporation.Preliminary NX6353EP Series LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LAS.
The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs m.

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Datasheet Specifications

Part number: NX6353EP
Manufacturer: California Eastern Labs
File Size: 714.39 KB
Datasheet: NX6353EP-CaliforniaEasternLabs.pdf
Description: LASER DIODE

Features

* Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 7 mA ηd = 0.35 W/A TC =
* 40 to +85°C φ 5.6 mm 6.2 mm R08

Applications

* 9.8 Gbps CPRI

NX6353EP Distributors

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NX6353EP LASER DIODE California Eastern Labs

California Eastern Labs NX6353EP-like datasheet