* Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 7 mA ηd = 0.35 W/A TC =
* 40 to +85°C φ 5.6 mm 6.2 mm R08
NX6353EP Datasheet (714.39 KB)
NX6353EP
California Eastern Labs
714.39 KB
Laser diode.
A Business Partner of Renesas Electronics Corporation. Preliminary NX6353EP Series LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LAS.
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