* Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 5.0 mW Ith = 10 mA ηd = 0.4 W/A TC =
* 40 to +85°C φ 5.6 mm 6.7 mm R08
NX6314EH Datasheet (903.57 KB)
NX6314EH
California Eastern Labs
903.57 KB
Laser diode.
A Business Partner of Renesas Electronics Corporation. Preliminary NX6314EH LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P .
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