RBE029N10R1SZN6 - N-Channel Power MOSFET

Datasheet Summary

Description

The RBE029N10R1SZN6 N-channel power MOSFET

Features

REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for.

Renesas

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Datasheet Details

Part number	RBE029N10R1SZN6
Manufacturer	Renesas
File Size	353.60 KB
Description	N-Channel Power MOSFET
Datasheet	RBE029N10R1SZN6 Datasheet
Additional preview pages of the RBE029N10R1SZN6 datasheet.

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Full PDF Text Transcription

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RBE029N10R1SZN6 REXFET-1 N-Channel Power MOSFET 100 V - 160 A - 2.9 mΩ - SO8-FL(5×6) Datasheet Description The RBE029N10R1SZN6 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 5x6 SO8-FL package. The SO8-FL package features ultra compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability and ease of assembly. Renesas' split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications. Features • Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V • Super low on-state resistance: RDS(on) = 2.9 m Max.

Published: Oct 28, 2025 |