Part number:
RBN75H65T1FPQ-A0
Manufacturer:
File Size:
164.29 KB
Description:
Igbt.
Datasheet Details
RBN75H65T1FPQ-A0 Features
* Trench gate and thin wafer technology (G8H series)
* Built in fast recovery diode in one package
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)
* Quality grade: Standard
* High speed switching
* Non-specification f
Datasheet Details
RBN75H65T1FPQ-A0
164.29 KB
Igbt.
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