RBN75H65T1FPQ-A0 - IGBT

Renesas

Datasheet Details

Trench gate and thin wafer technology (G8H series).
Built in fast recovery diode in one package.
Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C).
Quality grade: Standard.
High speed switching.
Non-specification for short circuit.

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Published: Sep 15, 2023 |