RBN75H65T1FPQ-A0 IGBT

Renesas

Description

Datasheet RBN75H65T1FPQ-A0 650V - 75A - IGBT Power Switching R07DS1383EJ0120 Rev.1.20 Aug.03.2020 .

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Datasheet Specifications

Part number: RBN75H65T1FPQ-A0
Manufacturer: Renesas ↗
File Size: 164.29 KB
Datasheet: RBN75H65T1FPQ-A0-Renesas.pdf
Description: IGBT

Features

* Trench gate and thin wafer technology (G8H series)
* Built in fast recovery diode in one package
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)
* Quality grade: Standard
* High speed switching
* Non-specification f

Applications

* UPS, Welding, photovoltaic inverters, Power converter system Key Performance Type RBN75H65T1FPQ-A0 VCES 650 V IC 75 A VCE(sat), TC=25°C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 123 1. Gate G 2. Collector 3. Emitter 4. Collector E R

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