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RBN75H65T1FPQ-A0

IGBT

RBN75H65T1FPQ-A0 Features

* Trench gate and thin wafer technology (G8H series)

* Built in fast recovery diode in one package

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25°C)

* Quality grade: Standard

* High speed switching

* Non-specification f

RBN75H65T1FPQ-A0 Datasheet (164.29 KB)

Preview of RBN75H65T1FPQ-A0 PDF

Datasheet Details

Part number:

RBN75H65T1FPQ-A0

Manufacturer:

Renesas ↗

File Size:

164.29 KB

Description:

Igbt.

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RBN75H65T1FPQ-A0 IGBT Renesas

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