RBN75H65T1FPQ-A0 Datasheet, Igbt, Renesas

RBN75H65T1FPQ-A0 Features

• Igbt
• Trench gate and thin wafer technology (G8H series)
• Built in fast recovery diode in one package
• Low collector to emitter saturation voltage VCE(sat) = 1.5 V

PDF File Details

Part number:

RBN75H65T1FPQ-A0

Manufacturer:

Renesas ↗

File Size:

164.29kb

Download:

📄 Datasheet

Description:

Igbt.

RBN75H65T1FPQ-A0 Application

• Applications UPS, Welding, photovoltaic inverters, Power converter system Key Performance Type RBN75H65T1FPQ-A0 VCES 650 V IC 75 A VCE(sat), TC

TAGS

RBN75H65T1FPQ-A0

Renesas

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