RBN75N65T1UFWA Datasheet - Renesas

IGBT

RBN75N65T1UFWA Features

* Renesas generation 8th Trench IGBT

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C)

* High speed switching

* Applications: UPS, Welding, photovoltaic inverters, Power converter system

* Unsawn wafer Wafer size = 200 mm

RBN75N65T1UFWA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully resp.

RBN75N65T1UFWA Datasheet (138.71 KB)

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RBN75N65T1UFWA

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Renesas ↗

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138.71 KB

Description:

Igbt.

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RBN75N65T1UFWA IGBT Renesas

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RBN75N65T1UFWA General Description

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