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RBN75N65T1UFWA IGBT

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Description

RBN75N65T1UFWA 650V - 75A - IGBT .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and app.

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Features

* Renesas generation 8th Trench IGBT
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C)
* High speed switching

Applications

* UPS, Welding, photovoltaic inverters, Power converter system
* Unsawn wafer Wafer size = 200 mm
* Quality grade: Standard Datasheet R07DS1498EJ0120 Rev.1.20 Oct.18th.2024 Key performance Product name RBN75N65T1UFWA VCES 650 V IC 75 A Die size 23.04 mm2 (4.80 mm x 4.80 mm) Package Unsa

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