RBN75N125S1UFWA Datasheet, Igbt, Renesas

PDF File Details

Part number:

RBN75N125S1UFWA

Manufacturer:

Renesas ↗

File Size:

140.24kb

Download:

📄 Datasheet

Description:

Igbt.

TAGS

📁 Related Datasheet

RBN75N65T1UFWA - IGBT (Renesas)
RBN75N65T1UFWA 650V - 75A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at.

RBN75H125S1FP4-A0 - IGBT (Renesas)
Datasheet RBN75H125S1FP4-A0 1250V - 75A - IGBT Power Switching R07DS1382EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolo.

RBN75H65T1FPQ-A0 - IGBT (Renesas)
Datasheet RBN75H65T1FPQ-A0 650V - 75A - IGBT Power Switching R07DS1383EJ0120 Rev.1.20 Aug.03.2020 Features  Trench gate and thin wafer technology .

RBN100N180S2HFWA - IGBT (Renesas)
RBN100N180S2HFWA 1800V - 200A/100A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN150N180S2HFWA - IGBT (Renesas)
RBN150N180S2HFWA 1800V - 300A/150A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN200N180S2HFWA - IGBT (Renesas)
RBN200N180S2HFWA 1800V - 400A/200A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN25H125S1FPQ-A0 - IGBT (Renesas)
RBN25H125S1FPQ-A0 1250V - 25A - IGBT Power Switching Datasheet R07DS1378EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolog.

RBN25N125S1UFWA - IGBT (Renesas)
RBN25N125S1UFWA 1250V - 25A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.

RBN40H125S1FPQ-A0 - IGBT (Renesas)
RBN40H125S1FPQ-A0 1250V - 40A - IGBT Power Switching Datasheet R07DS1380EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolog.

RBN40H65T1FPQ-A0 - IGBT (Renesas)
Datasheet RBN40H65T1FPQ-A0 650V - 40A - IGBT Power Switching R07DS1379EJ0121 Rev.1.21 Oct.14.2021 Features • Trench gate and thin wafer technology.