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RBN75N125S1UFWA

IGBT

RBN75N125S1UFWA Features

* Renesas generation 8th Trench IGBT

* Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C)

* High speed switching

* Short circuit withstands time (10 s min.)

* Applications: UPS, Welding, photovoltaic inverters, Power converte

RBN75N125S1UFWA Datasheet (140.24 KB)

Preview of RBN75N125S1UFWA PDF

Datasheet Details

Part number:

RBN75N125S1UFWA

Manufacturer:

Renesas ↗

File Size:

140.24 KB

Description:

Igbt.

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RBN75N125S1UFWA IGBT Renesas

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