RJH60T4DPQ-A0 Datasheet (Renesas) - High Speed Power Switching

RJH60T4DPQ-A0, High Speed Power Switching

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Renesa

RJH60T4DPQ-A0 Features

* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Outline RENESAS Package code: