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RJH60V1BDPE - IGBT

Renesas

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Datasheet Details

Part number	RJH60V1BDPE
Manufacturer	Renesas ↗
File Size	172.44 KB
Description	IGBT
Datasheet	RJH60V1BDPE_Renesas.pdf

RJH60V1BDPE Product details

Features

Short circuit withstand time (6 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (25 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0743EJ0200 Rev.2.00 May 25, 2011 Outline.

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Published: Jul 20, 2012 |