RJH60V1BDPE

IGBT

Renesas

* Short circuit withstand time (6 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (25 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 110 n

RJH60V1BDPE

172.44 KB

Igbt.

📁 Related Datasheet

RJH60V1BDPP-M0 IGBT (Renesas)

RJH6086BDPK IGBT (Renesas)

RJH6087BDPK High Speed Power Switching (Renesas)

RJH6088BDPK High Speed Power Switching (Renesas)

RJH60C9DPD Silicon N Channel IGBT (Renesas Technology)

RJH60D0DPK Silicon N Channel IGBT (Renesas Technology)

RJH60D0DPM IGBT (Renesas)

RJH60D0DPQ-A0 IGBT (Renesas)

RJH60D1DPE Silicon N Channel IGBT (Renesas Technology)

RJH60D1DPP-A0 IGBT (Renesas)

TAGS

RJH60V1BDPE IGBT Renesas

Image Gallery