RJH60V1BDPP-M0

IGBT

Renesas

* Short circuit withstand time (6 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (25 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 110 n

RJH60V1BDPP-M0

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Igbt.

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RJH60V1BDPP-M0 IGBT Renesas

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