Datasheet4U.com

RJH60V1BDPP-M0 - IGBT

Renesas

📥 Download Datasheet

RJH60V1BDPP-M0 Datasheet Preview — Preview of RJH60V1BDPP-M0 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	RJH60V1BDPP-M0
Manufacturer	Renesas ↗
File Size	176.77 KB
Description	IGBT
Datasheet	RJH60V1BDPP-M0_Renesas.pdf

RJH60V1BDPP-M0 Product details

Features

Short circuit withstand time (6 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (25 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.1.00 May 25, 2011 Outline.

📁 RJH60V1BDPP-M0 Similar Datasheet

RJH60C9DPD - Silicon N Channel IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)
RJH60D3DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D5DPK - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

RJH60V1BDPE - IGBT
RJH6086BDPK - IGBT
RJH6087BDPK - High Speed Power Switching
RJH6088BDPK - High Speed Power Switching
RJH60D0DPM - IGBT
RJH60D0DPQ-A0 - IGBT

Published: Jul 20, 2012 |