RJK03C1DPB - Silicon N Channel Power MOS FET

Renesas

Datasheet Details

Part number	RJK03C1DPB
Manufacturer	Renesas
File Size	283.84 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK03C1DPB_Renesas.pdf

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V).
Pb-free.
Halogen-free.
Outline.

📁 RJK03C1DPB Similar Datasheet

RJK0301DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0302DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0303DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0304DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0305DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0316DSP - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0328DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0329DPB - Silicon N Channel Power MOS FET Power Switching (Renesas Technology)

Other Datasheets by Renesas

Published: Sep 9, 2013 |