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RJK03C1DPB Silicon N Channel Power MOS FET

RJK03C1DPB Description

Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 .

RJK03C1DPB Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK

RJK03C1DPB Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon Channel Power MOS FET Renesas
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