RJK03C1DPB

Silicon N Channel Power MOS FET

Renesas

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK

RJK03C1DPB

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Silicon n channel power mos fet.

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RJK03C1DPB Silicon Channel Power MOS FET Renesas

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