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RJK03C2DPB Silicon N-Channel MOSFET

RJK03C2DPB Description

Preliminary RJK03C2DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00 Sep 29, 2009 .

RJK03C2DPB Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK

RJK03C2DPB Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel MOSFET Renesas
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