RJK6018DPM

MOS FET

Renesas

RJK6018DPM Features

* Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)

* Low leakage current

* High speed switching R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximu

RJK6018DPM General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK6018DPM Datasheet (98.65 KB)