RJK6032DPH-E0

MOS FET

Renesas

RJK6032DPH-E0 Features

* Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C)

* Low drive current

* High density mounting R07DS0993EJ0100 Rev.1.00 Jan 23, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolu

RJK6032DPH-E0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK6032DPH-E0 Datasheet (123.75 KB)