RJK6032DPH-E0 Datasheet - Renesas

RJK6032DPH-E0 MOS FET

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RJK6032DPH-E0 Features

* Low on-resistance RDS(on) = 3.3  typ. (at ID = 1.0 A, VGS = 10 V, Ta = 25C)

* Low drive current

* High density mounting R07DS0993EJ0100 Rev.1.00 Jan 23, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolu

RJK6032DPH-E0_Renesas.pdf