RJK6034DPD-E0

N-Channel Power MOSFET

Renesas

RJK6034DPD-E0 Features

* Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)

* Low leakage current

* High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Abs

RJK6034DPD-E0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK6034DPD-E0 Datasheet (137.71 KB)