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RJK60S3DPD High Speed Power Switching MOSFET

RJK60S3DPD Description

RJK60S3DPD 600V - 12A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0731EJ0300 Rev.3.00 Oct 12, 2012 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK60S3DPD Features

* Superjunction MOSFET
* Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
* High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 D 12 3 1. Gate G

RJK60S3DPD Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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High Speed Power Switching MOSFET Renesas
Renesas RJK60S3DPD-like datasheet